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Productions

SiC Epitaxial Wafers for semiconductor devices

Supported diameters:

  • 76.2 mm
  • 100.0 mm

Features:

  • High voltage operation
  • High temperature operation
  • High frequency operation

Specification


Parameter


Unit

Value

Diameter

mm 

(inch)

76.2 (3)

100.0 (4)

Polytype

Orientation

degree

4° toward  <11-20>

± 0.

Conductivity

n-type

Dopant

nitrogen

Edge exclusion:

76.2 mm (3 inch)

100.0 mm (4 inch)

mm

 

2

3

Usable area

%

not less than 92

Epi layer target thickness
(Si-face)

 

µm

 

0.2 – 50

Epi layer thickness uniformity 

%

±2

Epi layer net doping

cm-3

9×1014 – 1×1019

Epi layer net doping uniformity
(Si-face)

 

%

 

±10

Net doping maximum deviation
(Si-face)

 

%

 

±20

Epi  defects density 

сm-2

not more than 0.5

Micropipe density

cm-2

0 – 1

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